价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI7456DP-T1-GE3 | 0 | 5 | Cut Tape | ||||||||
| Farnell | SI7456DP-T1-GE3 | 3,322 | 5 | Cut Tape | 16h | |||||||
| element14 APAC | SI7456DP-T1-GE3 | 3,322 | 5 | Cut Tape | 4h | |||||||
| Mouser | 781-SI7456DP-T1-GE3 | 1,771 | 1 | Tape & Reel | ||||||||
| Weyland Electronics Group Pte. Ltd. | SI7456DP-T1-GE3 | 13,800 | 1 | Tape & Reel | 18h |
备用零件
Price @ 1000
$ 1.46
$ 1.818
Stock
498,736
312,235
Authorized Distributors
4
3
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
5.7 A
5.7 A
Threshold Voltage
2 V
2 V
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
1.9 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-08-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-12-21
LTD Date2025-06-21
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VishaySI7454DP-T1-E3
Single N-Channel 100 V 0.034 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
描述
由其分销商提供的 Vishay SI7456DP-T1-GE3 的描述。
Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin PowerPAK SO T/R
1.9W(Ta) 20V 4V@ 250¦ÌA 44nC@ 10 V 1N 100V 25m¦¸@ 9.3A,10V 5.7A 4.9mm*5.89mm*1.04mm
MOSFET N-CH 100V 5.7A PPAK SO-8
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SENSOR OPT SLOT PHOTOTRAN PCB MT
MOSFET, N CH, 100V, 5.7A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.7A; Power Dissipation Pd:1.9W; Voltage Vgs Max:20V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.9 W
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time46 ns
Turn-On Delay Time14 ns
Dimensions
Height1.04 mm
Length4.9 mm