供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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描述
由其分销商提供的 Vishay SI7137DP-T1-GE3 的描述。
Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
Power MOSFET, P Channel, 20 V, 60 A, 0.0016 ohm, PowerPAK SO, Surface Mount
P-CHANNEL 20-V (D-S) MOSFET Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes
MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance1.95 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance20 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max1.95 mΩ
Resistance1.95 mΩ
Rise Time150 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time230 ns
Turn-On Delay Time100 ns
Dimensions
Height1.12 mm
Length6.15 mm
Width5.15 mm