Infineon IRLHM620TRPBF

Name: Infineon IRLHM620TRPBF
Brand: Infineon
SKU: IRLHM620TRPBF

Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

$ 0.439

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Distributor		SKU		Min	Pkg
Newark	2	IRLHM620TRPBF	3,228	1	Cut Tape	1.440	0.911	0.604	0.430	0.430
Future Electronics	2	IRLHM620TRPBF	4,000	4K	Tape & Reel					0.585
Rochester Electronics		IRLHM620TRPBF	46,953					0.436	0.362	0.323	2h
Arrow Electronics	3	IRLHM620TRPBF	7,988	1		1.192	0.824	0.557	0.413	0.324
DigiKey	3	IRLHM620TRPBFCT-ND	7,008	1	Cut Tape	1.750	1.105	0.733	0.521	0.478

数据表和文档

下载 Infineon IRLHM620TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页10 年前

Datasheet9 页12 年前

element14 APAC

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-0.44%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-11-04

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IRLHM620TRPBF 的描述。

Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

Infineon SCT

Power MOSFET, N Channel, 20 V, 40 A, 0.0022 ohm, PQFN, Surface Mount

Avnet

MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3

RS (Formerly Allied Electronics)

MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W

Distrelec

MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon