供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-08-15
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
相关零件
STMicroelectronicsSTD35NF06LT4
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
描述
由其分销商提供的 onsemi FDD3706 的描述。
Transistor: N-MOSFET; unipolar; 20V; 50A; 0.009ohm; 44W; -55+175 deg.C; SMD; TO252(DPAK)
N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ
N-Channel 20 V 8 mOhm Surface Mount PowerTrench Mosfet - DPAK (TO-252)
Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 20V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)14.7 A
Current Rating50 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.882 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation44 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max9 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)20 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm