价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI2374DS-T1-GE3 | 6,000 | 3K | 1d | ||||||||
| Newark | SI2374DS-T1-GE3 | 3,000 | 1 | Cut Tape | ||||||||
| Future Electronics | SI2374DS-T1-GE3 | 3,000 | 3K | Tape & Reel | ||||||||
| Rutronik | TMOSS6629 | 3,000 | 3K | 6h | ||||||||
| DigiKey | SI2374DS-T1-GE3CT-ND | 78,508 | 1 | Cut Tape |
供应链
Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2014-04-25
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
Diodes Inc.DMN2075U-7
Single N-Channel 20 V 45 mOhm 7 nC 0.8 W Silicon Surface Mount Mosfet - SOT-23
VishaySI2312CDS-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 6A; 0.0318ohm; 2.1W; -55+150 deg.C; SMD; SOT23
VishaySI2302ADS-T1-E3
MOSFET, POWER, N-CH, VDSS 20V, RDS(ON) 0.045OHM, ID 2.1A, TO-236 (SOT-23),PD 0.7W
描述
由其分销商提供的 Vishay SI2374DS-T1-GE3 的描述。
Si2374DS Series 20 V 0.030 Ohm SMT N-Channel MOSFET - SOT-23 (TO-236)
Power MOSFET, N Channel, 20 V, 5.9 A, 0.03 ohm, SOT-23, Surface Mount
N-Ch MOSFET SOT-23 Cu wire 20V 30mohm @ 4.5V
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation960 mW
Rise Time22 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time10 ns
Dimensions
Height1.12 mm