价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMG3414U-7 | 9,000 | 3K | 12h | ||||||||
| Newark | DMG3414U-7 | 9,000 | 3K | Tape & Reel | ||||||||
| TME | DMG3414U-7 | 162 | 1 | 8h | ||||||||
| DigiKey | DMG3414U-7DICT-ND | 31,732 | 1 | Cut Tape | ||||||||
| Future Electronics | DMG3414U-7 | 0 | 3K | Tape & Reel |
备用零件
Price @ 1000
$ 0.224
$ 0.306
$ 0.306
Stock
2,452,859
1,454,900
1,454,900
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
4.2 A
3.9 A
3.9 A
Threshold Voltage
-
8 V
8 V
Rds On Max
25 mΩ
31 mΩ
31 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
780 mW
750 mW
750 mW
Input Capacitance
829.9 pF
-
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Diodes Inc. DMG3414U-7 的描述。
Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
N-Channel 20 V 2.5 mOhm Surface Mount Enhancement Mode Transistor SOT-23-3
Mosfet Bvdss: 8V-24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG3414U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.78 W
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time9.6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance829.9 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation780 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation780 mW
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time8.3 ns
Schedule B8541210080
Turn-Off Delay Time40.1 ns
Turn-On Delay Time8.1 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm