供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 3 months ago)
描述
由其分销商提供的 Vishay IRFR9024PBF 的描述。
Single P-Channel 60 V 0.28 Ohms Surface Mount Power Mosfet - TO-252
POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-8.8A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, P, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:8.8A; Resistance, Rds On:0.28ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Current, Idm Pulse:35A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd:42W; SMD Marking:IRFR9024PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8.8 A
Current Rating-8.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max280 mΩ
Recovery Time200 ns
Resistance280 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.52 mm
Length6.73 mm