onsemi FQD11P06TM

TRANSISTOR, P-CHANNEL, QFET MOSFET, -60V, -9.4A, 185 MOHM, -55 TO 150C, D2PAK

Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK

In a Pack of 5, P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK ON Semiconductor FQD11P06TM

MOSFET P-CH 60V 9.4A DPAK / Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R

P-Channel 60 V 0.185 Ohm Surface Mount Mosfet - TO-252-3

P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

MOSFET, P-CHANNEL, -60V, -9.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -9.4 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 38