价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR014TRLPBF | 18,000 | 3K | 2d | ||||||||
| DigiKey | IRFR014TRLPBFCT-ND | 2,503 | 1 | Cut Tape | ||||||||
| TME | IRFR014TRLPBF | 0 | 3K | 15h | ||||||||
| TTI | IRFR014TRLPBF | 0 | 3K | Tape & Reel | 2d | |||||||
| Future Electronics | IRFR014TRLPBF | 0 | 3K | Tape & Reel |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
onsemiNTD3055-150T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9A Ta 9A 28.8W 23ns
描述
由其分销商提供的 Vishay IRFR014TRLPBF 的描述。
IRFR014 Series 60 V 7.7 A 2.5 W SMT N-Channel Power Mosfet - TO-252-3
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - TR
Mosfet N-Channel 60V Rohs Compliant: No
N-Ch 60V 7,7A 25W 0,2R TO252AA
Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
null 7.7A 200mΩ@4.6A,10V null TO-252 MOSFETs ROHS
2.5W(Ta),25W(Tc) 20V 4V@ 250¦ÌA 11nC@ 10 V 1N 60V 200m¦¸@ 4.6A,10V 7.7A 300pF@25V TO-252 6.73mm*6.22mm*2.38mm
NCHAN, TO-252AA, 60V IRFR014TRLPBF
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)7.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance300 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max200 mΩ
Rise Time50 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm