价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IRFBC40ASPBF | 50 | 42 | |||||||||
| Future Electronics | IRFBC40ASPBF | 7 | 20 | Tube | ||||||||
| TME | IRFBC40ASPBF | 50 | 1 | 4h | ||||||||
| DigiKey | IRFBC40ASPBF-ND | 67 | 1 | Tube | ||||||||
| TTI | IRFBC40ASPBF | 450 | 50 | Tube | 8h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET
描述
由其分销商提供的 Vishay IRFBC40ASPBF 的描述。
Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3
MOSFET, POWER, N-CH, VDSS 600V, RDS(ON) 1.2 OHMS, ID 6.2A, D2PAK, PD 125W, VGS +/-30V
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; On Resistance Rds(On):1.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.036 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time13 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm