STMicroelectronics STB9NK60ZT4

Name: STMicroelectronics STB9NK60ZT4
Brand: STMicroelectronics
SKU: STB9NK60ZT4

N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package

$ 1.42

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Distributor		SKU		Min	Pkg
Newark		STB9NK60ZT4	489	1	Cut Tape	3.780	2.660	2.110	1.530	1.530
Verical		STB9NK60ZT4	18,000	1K					0.746	0.726
Arrow Electronics	2	STB9NK60ZT4	1	1		1.318	1.318	1.318	1.318	1.318
DigiKey	2	497-12544-1-ND	454	1	Cut Tape	4.390	2.885	2.031	1.715	1.715
TME	2	STB9NK60ZT4	0	1		3.549*	2.338*	1.798*	1.657*	1.657*	1d

数据表和文档

下载 STMicroelectronics STB9NK60ZT4 的数据表和制造商文档。

Future Electronics

Datasheet19 页14 年前

Datasheet13 页23 年前

element14 APAC

库存历史记录

3 个月趋势:

-9.25%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB9NK60ZT4 的描述。

N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package

STMicroelectronics

STB9NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 7 A, 600 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) D2PAK Tube

Avnet

MOSFET, N CH, 600V, 7A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 7A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Channel, 600V, 7A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:3.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):850Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB9NK60ZT4

Newark