STMicroelectronics STB6NK60ZT4

Name: STMicroelectronics STB6NK60ZT4
Brand: STMicroelectronics
SKU: STB6NK60ZT4

N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET

$ 1.072

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Distributor		SKU		Min	Pkg
Newark		STB6NK60ZT4	4,611	1	Cut Tape	3.320	2.300	1.740	1.330	1.330
Arrow Electronics		STB6NK60ZT4	4,000	1K					0.630	0.612
Verical		STB6NK60ZT4	4,000	1K					0.629	0.605
DigiKey	2	497-12537-1-ND	776	1	Cut Tape	3.570	2.325	1.617	1.314	1.314
RS (Formerly Allied Electronics)		STB6NK60ZT4	0	5	Bulk		0.920	0.820	0.820	0.820	21h

数据表和文档

下载 STMicroelectronics STB6NK60ZT4 的数据表和制造商文档。

IHS

Datasheet17 页20 年前

Farnell

Mouser

库存历史记录

3 个月趋势:

-0.11%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB6NK60ZT4 的描述。

N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET

STMicroelectronics

STB6NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 6 A, 600 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 6A D2PAK

Win Source

Power MOSFET, N Channel, 600 V, 3 A, 1 ohm, TO-263 (D2PAK), Surface Mount

Avnet

110W(Tc) 30V 4.5V@ 100¦ÌA 46nC@ 10 V 1N 600V 1.2¦¸@ 3A,10V 6A 905pF@25V D2PAK 4.83mm

Unikeyic (ICkey)

Single N-Channel 600 V 1.2 Ohm 46 nC 110 W Silicon SMT Mosfet - TO-263-3

Future Electronics

MOSFET, N CH, 600V, 6A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Channel, 600V, 6A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:3A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Stmicroelectronics STB6NK60ZT4

Newark