供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-30
Lifecycle StatusNRND (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
相关零件
VishaySIHP14N50D-GE3
MOSFET, N-CH, 500V, 14A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 Vishay IRFB11N50APBF 的描述。
Single N-Channel 500 V 0.52 Ohms Flange Mount Power Mosfet - TO-220-3
IRFB11N50APBF N-CHANNEL MOSFET TRANSISTOR, 11 A, 500 V, 3-PIN TO-220AB
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-220AB, Through Hole
Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 11A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:500V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.423 nF
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation170 W
Rds On Max520 mΩ
Resistance520 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)500 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm