描述
由其分销商提供的 onsemi IRF740B 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 134W 85ns
Trans MOSFET N-CH 400V 10A 3-Pin (3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.54ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Current10 A
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time85 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation134 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation134 W
Rds On Max540 mΩ
Rise Time80 ns
Threshold Voltage4 V
Turn-Off Delay Time125 ns
Voltage400 V