供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
相关零件
VishaySIHP10N40D-GE3
MOSFET, N-CH, 400V, 10A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 Vishay SIHP14N50D-GE3 的描述。
MOSFET, N-CH, 500V, 14A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
VISHAY SIHP14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
MOSFET N-CH 500V 14A TO220AB / N-Channel 500 V 14A (Tc) 208W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 500V, 14A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.144 nF
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation208 W
Rds On Max400 mΩ
Rise Time27 ns
Threshold Voltage3 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Dimensions
Height9.01 mm
Length10.51 mm
Width4.65 mm