供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
描述
由其分销商提供的 onsemi FQP16N25C 的描述。
MOSFET N-CH 250V 15.6A TO-220
Power Field-Effect Transistor, 15.6A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 250V N-Channel Advance Q-FET
N-Channel MOSFET
FQP16N25C, Fairchild
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)15.6 A
Current Rating16 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.08 nF
Max Operating Temperature150 °C
Max Power Dissipation139 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation139 W
Rds On Max270 mΩ
Rise Time130 ns
Turn-Off Delay Time135 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)250 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm