价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 296-40006-1-ND | 137,504 | 1 | Cut Tape | ||||||||
| Mouser | 595-CSD25481F4 | 11,533 | 1 | Tape & Reel | ||||||||
| Component Stockers USA | CSD25481F4 | 64,826 | 22h | |||||||||
| Win Source | WS-CSD25481F4 | 90,000 | 360 | 8h | ||||||||
| Worldway Electronics | CSD25481F4 | 11,245 | 7 | Tape & Reel | 7h |
备用零件
Price @ 1000
$ 0.109
$ 0.354
Stock
1,630,512
253,870
Authorized Distributors
2
5
Mount
Surface Mount
Surface Mount
Case/Package
QFN
QFN
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
-2.5 A
-2.5 A
Threshold Voltage
-
-950 mV
Rds On Max
88 mΩ
88 mΩ
Gate to Source Voltage (Vgs)
-12 V
-12 V
Power Dissipation
500 mW
500 mW
Input Capacitance
189 pF
189 pF
供应链
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
工程资源
查看 Texas Instruments CSD25481F4 的评估工作包和参考设计。
评估工具包
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描述
由其分销商提供的 Texas Instruments CSD25481F4 的描述。
MOSFET P-CH 20V 2.5A 3PICOSTAR / P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Trans MOSFET P-CH 20V 2.5A 3-Pin PICOSTAR T/R
500mW(Ta) 12V 1.2V@ 250¦ÌA 0.913nC@ 4.5 V 1P 20V 88m¦¸@ 500mA,8V 2.5A 189pF@10V PICOSTAR-3 350¦Ìm
MOSFET P-CH 20V 2.5A 3PICOSTAR
MOSFETs P-Channel 20V 2.5A PICOSTAR3
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TEXAS INSTRUM
- TI Texas Instruments
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-2.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time6.7 ns
Gate to Source Voltage (Vgs)-12 V
Input Capacitance189 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 mW
Rds On Max88 mΩ
Rise Time3.6 ns
Turn-Off Delay Time16.9 ns
Turn-On Delay Time4.1 ns
Dimensions
Height350 µm
Length1.035 mm
Width635 µm