Infineon IRFHS8342TR2PBF

Name: Infineon IRFHS8342TR2PBF
Brand: Infineon
SKU: IRFHS8342TR2PBF

30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Avnet	IRFHS8342TR2PBF	0	2400							2d
Win Source	WS-IRFHS8342TR2PBF	20	20				2.000	1.733	1.733	22h
Worldway Electronics	IRFHS8342TR2PBF	13,727	7	Tape & Reel		0.071	0.070	0.067	0.066	21h
Chipsmall Limited	IRFHS8342TR2PBF	200,000	1		0.480	0.320	0.192	0.160	0.160	1h
Anlinkda	IRFHS8342TR2PBF	42,079			0.060	0.054	0.048	0.046	0.046	1d

数据表和文档

下载 Infineon IRFHS8342TR2PBF 的数据表和制造商文档。

IHS

Datasheet10 页12 年前

Datasheet9 页12 年前

element14 APAC

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-11-18

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2014-05-12

LTD Date2014-11-12

描述

由其分销商提供的 Infineon IRFHS8342TR2PBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package

International Rectifier

Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R

Verical

MOSFET N-Channel 30V 8.8A HEXFET PQFN6EP

RS (Formerly Allied Electronics)

HEXFET POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET,N CH,30V,8.5A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.8A; Power Dissipation Pd:2.1W; Voltage Vgs Max:20V

element14 APAC