供应链
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
相关零件
InfineonIRF7504TRPBF
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
描述
由其分销商提供的 Texas Instruments CSD25213W10 的描述。
-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection 4-DSBGA -55 to 150
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R
1W(Ta) 6V 1.1V@ 250µA 2.9nC@ 4.5 V 1individualPChannel 20V 47mΩ@ 1A,4.5V 1.6A 478pF@10V DSBGA SMD mount 1mm*1mm*630μm
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; Maximum Drain Current (ID): 1.6 A;
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)-1.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time970 ns
Gate to Source Voltage (Vgs)-6 V
Input Capacitance478 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max47 mΩ
Rise Time520 ns
Schedule B8541290080
Turn-Off Delay Time1 µs
Turn-On Delay Time510 ns
Dimensions
Height625 µm
Length0 m
Thickness650 µm
Width0 m