供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-07-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDN327N 的描述。
N-Channel PowerTrench® MOSFET, 1.8 Vgs Specified, 20V, 2A, 70mΩ
Transistor MOSFET Negative Channel 20 Volt 2A 3-Pin SuperSOT T/R
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
MOSFET, N-CH, 20V, 2A, 3-SSOT, RL; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; P
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time6.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance423 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time6.5 ns
Schedule B8541210080
Threshold Voltage700 mV
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)20 V
Dimensions
Height1.22 mm
Length2.92 mm
Width1.4 mm