These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
MOSFET, DUAL, PP, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:5A; SMD Marking:FCD6306P; Termination Type:SMD; Uni / Bi Directional Polarity:PP; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V