备用零件
Price @ 1000
$ 0.344
$ 0.096
Stock
1,712,267
2,752,772
Authorized Distributors
5
4
Mount
Surface Mount
Surface Mount
Case/Package
QFN
QFN
Drain to Source Voltage (Vds)
12 V
12 V
Continuous Drain Current (ID)
2.1 A
2.1 A
Threshold Voltage
850 mV
-
Rds On Max
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
500 mW
500 mW
Input Capacitance
200 pF
200 pF
供应链
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
工程资源
查看 Texas Instruments CSD13381F4T 的评估工作包和参考设计。
评估工具包
描述
由其分销商提供的 Texas Instruments CSD13381F4T 的描述。
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Texas Instruments N-Channel MOSFET Vds=12V 2.1A PICOSTAR Package SMD
Trans MOSFET N-CH 12V 2.1A 3-Pin PICOSTAR T/R
MOSFET, N-CHANNEL, 12V, 2.1A, LGA-3;
Small Signal Field-Effect Transistor, 2.1A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 12V 2.1A 3PICOSTAR
Texas Instruments CSD13381F4T MOSFET
MOSFET, N-CHANNEL, 12V, 2.1A, LGA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850m
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vds)12 V
Element ConfigurationSingle
Fall Time3.8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance200 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 mW
Rds On Max180 mΩ
Rise Time1.5 ns
Schedule B8541210040
Threshold Voltage850 mV
Turn-Off Delay Time11 ns
Turn-On Delay Time3.7 ns
Dimensions
Height350 µm
Length1.035 mm
Width635 µm