数据表和文档
下载 STMicroelectronics STY60NM50 的数据表和制造商文档。
官方数据表2 年前
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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描述
由其分销商提供的 STMicroelectronics STY60NM50 的描述。
N-Channel 500V - 0.045 Ohm - 60A Max247(TM) Zener-Protected MDmesh(TM) Power MOSFET
Transistor MOSFET N-CH 500V 60A 3-Pin (3+Tab) Max247 Tube
MOSFET, N, MAX-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.5 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation560 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time51 ns
Voltage Rating (DC)500 V
Dimensions
Height6.35 mm
Length25.4 mm
Width6.35 mm