供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-01-22
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTW43NM60ND
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
描述
由其分销商提供的 onsemi FDH44N50 的描述。
N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
onsemi N-Channel MOSFET UniFET Series, Vds=500V, 44A, TO-247, TH, 3-Pin
Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Coaxial Connectors (RF) Jack, Male Pin Snap-On 1 (Unlimited) 50 Ω 10 Weeks Bulk SSMB Through Hole, Right Angle Brass RF Connectors / Coaxial Connectors SSMB M RA NA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:500V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.15V; Power Dissipation Pd:750W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:44A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:750W; Power Dissipation Pd:750W; Power Dissipation Ptot Max:750W; Pulse Current Idm:176A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.15V; Voltage Vgs Rds on Measurement:10V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)44 A
Current Rating44 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time79 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.335 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation750 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.15 V
Number of Channels1
Number of Elements1
Power Dissipation750 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time84 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage3.15 V
Turn-Off Delay Time45 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)500 V
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明