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描述
由其分销商提供的 STMicroelectronics STW70N60DM2 的描述。
N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
Power Field-Effect Transistor, 66A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmesh DM2series, Vds=600 V, 66 A, TO-247encapsulation, Through hole mounting, 3Pin
Mosfet, N-Ch, 600V, 66A, 150Deg C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:66A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW70N60DM2
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)66 A
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)600 V
Input Capacitance5.508 nF
Max Operating Temperature150 °C
Max Power Dissipation446 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max42 mΩ
Schedule B8541210080
Threshold Voltage4 V