供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-14
Lifecycle StatusProduction (Last Updated: 6 months ago)
相关零件
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描述
由其分销商提供的 STMicroelectronics STY105NM50N 的描述。
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh(TM) II Power MOSFET in Max247 package
MOSFET N-CH 500V 110A MAX247 / N-Channel 500 V 110A (Tc) 625W (Tc) Through Hole MAX247™
Power MOSFET, N Channel, 500 V, 110 A, 0.019 ohm, MAX-247, Through Hole
625W(Tc) 25V 4V@ 250µA 326nC@ 10 V 1individualNChannel 500V 22mΩ@ 52A,10V 110A 9.6nF@100V MAX-247-3 Through hole mounting
MOSFET, N-CH, 500V, 110A, MAX-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins247
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance9.6 nF
Max Operating Temperature150 °C
Max Power Dissipation625 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation625 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time88 ns
Schedule B8541290080
Turn-Off Delay Time353 ns
Turn-On Delay Time47 ns