onsemi FCH072N60F

N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247

Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

481W(Tc) 20V 5V@ 250µA 215nC@ 10 V 1individualNChannel 600V 72mΩ@ 26A,10V 52A 8.66nF@100V TO-247-3 Through hole mounting 15.62mm*4.7mm*24.38mm

MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.