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描述
由其分销商提供的 STMicroelectronics STWA88N65M5 的描述。
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 650V, 84A, To-247Ll Rohs Compliant: Yes |Stmicroelectronics STWA88N65M5
450W(Tc) 25V 5V@ 250¦ÌA 204nC@ 10 V 1individualNChannel 650V 29m¦¸@ 42A,10V 84A 8.825nF@100V TO-247-3 Through hole mounting
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)84 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance8.825 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation450 W
Rds On Max29 mΩ
Rise Time16 ns
Schedule B8541290080