STMicroelectronics STW34NM60N

Name: STMicroelectronics STW34NM60N
Brand: STMicroelectronics
SKU: STW34NM60N

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

$ 5.055

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Distributor		SKU		Min	Pkg
Avnet		STW34NM60N	1,344	1		4.731	4.530	4.450	4.450	4.450	6d
Future Electronics	2	STW34NM60N	10	30	Tube			5.830	5.760	5.720
Arrow Electronics	2	STW34NM60N	637	1		5.301	5.301	5.249	4.998	4.998
Verical	2	STW34NM60N	637	2			4.998	4.998	4.998	4.998
TME	2	STW34NM60N	301	1		8.250	5.660	4.600	3.520	3.520	9h

数据表和文档

下载 STMicroelectronics STW34NM60N 的数据表和制造商文档。

Newark

Datasheet12 页13 年前

Components Direct

Factory Futures

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-24.64%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-08-06

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STW34NM60N 的描述。

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

STMicroelectronics

Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 29A TO-247

Win Source

STW34NM60N N-CHANNEL MOSFET TRANSISTOR, 29 A, 600 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

600 V, 29 A, 0.092 OHM N-CHANNEL MDMESH II POWER MOSFET IN TO-247 Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:210W; No. of Pins:3Pins RoHS Compliant: Yes

Newark