供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-04-25
LTD Date2019-10-25
相关零件
STMicroelectronicsSTW48NM60N
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
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描述
由其分销商提供的 STMicroelectronics STW47NM60ND 的描述。
Trans MOSFET N-CH 600V 35A Automotive 3-Pin(3+Tab) TO-247 Tube
Automotive-grade N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
35 A 600 V 0.088 ohm N-CHANNEL Si POWER MOSFET TO-247
MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.2 nF
Max Operating Temperature150 °C
Max Power Dissipation255 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max88 mΩ
Resistance88 MΩ
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time120 ns
Turn-On Delay Time30 ns