供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-10
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
相关零件
STMicroelectronicsSTW34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package
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描述
由其分销商提供的 onsemi FCH25N60N 的描述。
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance126 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.352 nF
Max Operating Temperature150 °C
Max Power Dissipation216 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation216 W
Rds On Max126 mΩ
Rise Time22 ns
Threshold Voltage2 V
Turn-Off Delay Time68 ns
Turn-On Delay Time21 ns
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm