STMicroelectronics STW28N60M2

Name: STMicroelectronics STW28N60M2
Brand: STMicroelectronics
SKU: STW28N60M2

N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package

$ 2.011

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		STW28N60M2	3	1		2.011	2.011	2.011	2.011	2.011
Verical		STW28N60M2	3	3			2.011	2.011	2.011	2.011
TME	2	STW28N60M2	69	1		4.320*	3.202*	2.742*	2.742*	2.742*	14h
DigiKey		497-14292-5-ND	127	1	Tube	4.570	4.570	2.528	1.745	1.482
Avnet		STW28N60M2	0	600					1.656	1.423	3h

数据表和文档

下载 STMicroelectronics STW28N60M2 的数据表和制造商文档。

TME

Datasheet21 页13 年前

Future Electronics

Farnell

库存历史记录

3 个月趋势:

-89.70%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-09-13

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STW28N60M2 的描述。

N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package

STMicroelectronics

STW28N60M2 N-CHANNEL MOSFET TRANSISTOR, 22 A, 650 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

Single N-Channel 600 V 170 W 36 nC Silicon Through Hole Mosfet - TO-247-3

Future Electronics

Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

Mosfet, N-Ch, 600V, 22A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STW28N60M2

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