STMicroelectronics STW25NM60ND

Name: STMicroelectronics STW25NM60ND
Brand: STMicroelectronics
SKU: STW25NM60ND

N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

$ 7.26

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	STW25NM60ND	0	1	Bulk	7.260	7.260	7.260	7.260	7.260	2h
Farnell	STW25NM60ND	0	1		2.623*	2.623*	2.623*	2.623*	2.623*	11h
Component Stockers USA	STW25NM60ND	481			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	WS-STW25NM60ND	20	10			5.960	3.973	3.973	3.973	12h
Worldway Electronics	STW25NM60ND	17,488	7	Tube		1.400	1.374	1.321	1.294	1d

数据表和文档

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IHS

Datasheet21 页20 年前

TME

iiiC

Future Electronics

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-01-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-04-25

LTD Date2019-10-25

描述

由其分销商提供的 STMicroelectronics STW25NM60ND 的描述。

N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

STMicroelectronics

Single N-Channel 600 V 0.16 Ohm 29 nC 160 W Silicon Flange Mount Mosfet TO-247-3

Future Electronics

STW25NM60ND N-CHANNEL MOSFET TRANSISTOR, 21 A, 600 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

MOSFET, N CH, 600V, 21A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Farnell