STMicroelectronics STW33N60DM2

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
$ 2.639
Production
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价格与库存

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DistributorSKUMinPkg
TME
2
STW33N60DM2101
8h
DigiKey497-16353-5-ND4581Tube
AvnetSTW33N60DM20600
12h
Arrow ElectronicsSTW33N60DM20600
FarnellSTW33N60DM20600
1d

数据表和文档

下载 STMicroelectronics STW33N60DM2 的数据表和制造商文档。

Newark

Datasheet20 页10 年前
Datasheet20 页10 年前

STMicroelectronics

TME

库存历史记录

3 个月趋势:
-4.07%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-10-20
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 STMicroelectronics STW33N60DM2 的描述。

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
STMicroelectronics
190W(Tc) 25V 5V@ 250¦ÌA 43nC@ 10 V 1N 600V 130m¦¸@ 12A,10V 24A 1.87nF@100V TO-247-3 20.15mm
Unikeyic (ICkey)
Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-247 Tube
Verical
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IHS
Power MOSFETs, 600V, 24A, TO-247, Tube
STMicroelectronics SCT
Extremely high dv/dt ruggedness
Win Source
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STW33N60DM2
Newark

图片

Newark
RS
TME
Lanka Micro

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics