STMicroelectronics STW21NM60ND

Name: STMicroelectronics STW21NM60ND
Brand: STMicroelectronics
SKU: STW21NM60ND

MOSFET Transistor, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V RoHS Compliant: Yes

$ 3.05

Obsolete

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Distributor		SKU		Min	Pkg
TME	2	STW21NM60ND	0	1		5.026*	4.002*	3.590*	3.590*	3.590*	14h
Farnell		STW21NM60ND	0	1		7.368*	5.747*	4.984*	4.671*	4.671*	1d
Win Source		WS-STW21NM60ND	6,000	15				3.050	2.735	2.735	2h
Worldway Electronics		STW21NM60ND	20,988	7	Tube		1.290	1.251	1.185	1.185	1h
Esaler Electronic		STW21NM60ND	600			3.150	3.119	3.088	3.058	3.028	2h

数据表和文档

下载 STMicroelectronics STW21NM60ND 的数据表和制造商文档。

IHS

Datasheet21 页13 年前

Factory Futures

Verical

Components Direct

iiiC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-09-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-04-25

LTD Date2019-10-25

描述

由其分销商提供的 STMicroelectronics STW21NM60ND 的描述。

MOSFET Transistor, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V RoHS Compliant: Yes

Newark

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package

STMicroelectronics

N-CHANNEL 600 V, 0.17 OHM, 17 A-TO-247 FDMESH II POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

ComSIT Distribution GmbH

MOSFET, N CH, 600V, 17A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Farnell