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MOSFET N-CH 650V 4.5A TO251-3 / Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube
描述
由其分销商提供的 STMicroelectronics STU7N60M2 的描述。
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
STU7N60M2 N-CHANNEL MOSFET TRANSISTOR, 5 A, 650 V, 3-PIN IPAK
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15.9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance271 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max950 mΩ
Rise Time7.2 ns
Schedule B8541290080
Turn-Off Delay Time19.3 ns
Turn-On Delay Time7.6 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm