价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STU9N65M2 | 0 | 1 | 9h | ||||||||
| Mouser | 511-STU9N65M2 | 2,939 | 1 | Tube | ||||||||
| Microchip USA | STU9N65M2 | 325 | 600 | Tube | 4h | |||||||
| Win Source | WS-STU9N65M2 | 1,530 | 45 | 11h | ||||||||
| Worldway Electronics | STU9N65M2 | 14,087 | 7 | Tube | 10h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
描述
由其分销商提供的 STMicroelectronics STU9N65M2 的描述。
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
Power Field-Effect Transistor, 5A I(D), 650V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight3.949996 g
Technical
Continuous Drain Current (ID)5 A
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time18 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance315 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max900 mΩ
Resistance790 mΩ
Rise Time6.6 ns
Threshold Voltage3 V
Turn-Off Delay Time22.5 ns
Turn-On Delay Time7.5 ns