价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STU6N60M2 | 0 | 3K | 1d | ||||||||
| Mouser | 511-STU6N60M2 | 753 | 1 | Tube | ||||||||
| Microchip USA | STU6N60M2 | 252 | 150 | Tube | 20h | |||||||
| Win Source | WS-STU6N60M2 | 3,115 | 65 | 5h | ||||||||
| Worldway Electronics | STU6N60M2 | 28,301 | 7 | Tube | 4h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-12
Lifecycle StatusObsolete (Last Updated: 3 months ago)
描述
由其分销商提供的 STMicroelectronics STU6N60M2 的描述。
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
MOSFET N-CH 600V 4.5A IPAK / N-Channel 600 V 4.5A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STU6N60M2 N-channel MOSFET Transistor, 4.5 A, 650 V, 3-Pin IPAK
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance232 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation60 W
Rds On Max1.2 Ω
Rise Time7.4 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time9.5 ns
Dimensions
Height6.2 mm
Length6.6 mm
Width2.4 mm