供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
相关零件
STMicroelectronicsSTP100NF04
N-channel 40 V, 0.0043 Ohm typ., 120 A, STripFET(TM) II Power MOSFET in TO-220 package
STMicroelectronicsSTP110N55F6
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package
InfineonAUIRF1010Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
描述
由其分销商提供的 STMicroelectronics STP150NF55 的描述。
N-CHANNEL 55V - 0.005 OHM -120A TO-220 STripFET II MOSFET
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
300W(Tc) 20V 4V@ 250µA 190nC@ 10 V 1individualNChannel 55V 6mΩ@ 60A,10V 120A 4.4nF@25V TO-220 Through hole mounting 10.4mm*4.6mm*9.15mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time180 ns
Schedule B8541290080
Turn-Off Delay Time140 ns
Turn-On Delay Time35 ns