描述
由其分销商提供的 STMicroelectronics STP20NM50FD 的描述。
N-Channel 500V - 0.22Ohm - 20A - TO-220 FDmesh(TM) POWER MOSFET (with FAST DIODE)
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 500 V, 20 A, 0.22 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.22Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Stmicroelectronics STP20NM50FD.
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.38 nF
Max Operating Temperature150 °C
Max Power Dissipation192 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation192 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time20 ns
Schedule B8541290080
Turn-On Delay Time22 ns
Voltage Rating (DC)500 V