onsemi FDP22N50N

Name: onsemi FDP22N50N
Brand: onsemi
SKU: FDP22N50N

N-Channel Power MOSFET, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220

$ 1.899

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDP22N50N	509					1.810	1.620	1.520	9h
Arrow Electronics	2	FDP22N50N	714	1		2.834	2.834	2.446	2.100	2.100
Verical	3	FDP22N50N	56	1		2.719	2.719	2.374	1.899	1.738
Newark		FDP22N50N	0	150					3.090	2.570
Onlinecomponents.com		FDP22N50N	0	50	Bulk			2.320	1.760	1.730

数据表和文档

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Upverter

Datasheet9 页2 年前

Technical Drawing1 页6 年前

Master Electronics

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+30.46%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-05-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDP22N50N 的描述。

N-Channel Power MOSFET, UniFETTM II, 500 V, 22 A, 220 mΩ, TO-220

onsemi

Power MOSFET, N Channel, 500 V, 22 A, 0.185 ohm, TO-220, Through Hole

Avnet

MOSFET, N-CH, 500V, 22A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe

Farnell

Power Field-Effect Transistor, 22A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor