STMicroelectronics STP13N60M2

Name: STMicroelectronics STP13N60M2
Brand: STMicroelectronics
SKU: STP13N60M2

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

$ 0.728

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制造商页面数据表

价格与库存

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Distributor		SKU		Min
Avnet	2	45AC7691	19	1	2.360	1.380	1.170	0.935	0.817	12h
Newark		STP13N60M2	19	1	2.360	1.380	1.170	0.935	0.817
Arrow Electronics		STP13N60M2	1,200	1	0.707	0.672	0.634	0.611	0.611
Verical		STP13N60M2	1,200	12			0.633	0.610	0.610
TME	2	STP13N60M2	122	1	2.426*	1.559*	1.107*	0.835*	0.765*	23h

数据表和文档

下载 STMicroelectronics STP13N60M2 的数据表和制造商文档。

Future Electronics

Datasheet18 页13 年前

库存历史记录

3 个月趋势:

-0.83%

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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STP13N60M2 的描述。

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

STMicroelectronics

STP13N60M2 N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin TO-220

RS (Formerly Allied Electronics)

STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3

Future Electronics

110W(Tc) 25V 4V@ 250¦ÌA 17nC@ 10 V 1N 600V 380m¦¸@ 5.5A,10V 11A 580pF@100V TO-220

UnikeyIC

Low gate input resistance | MOSFET N-CH 600V 11A TO-220

Win Source

Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP13N60M2

Newark

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS