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STMicroelectronicsSTF18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package
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描述
由其分销商提供的 STMicroelectronics STP18N60M2 的描述。
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package
STP18N60M2 N-CHANNEL MOSFET TRANSISTOR, 13 A, 650 V, 3-PIN TO-220
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 13A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance791 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time9 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm