STMicroelectronics STP11NM60ND

N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
$ 1.83
Obsolete
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
NewarkSTP11NM60ND421
VericalSTP11NM60ND5555
Arrow ElectronicsSTP11NM60ND5050
TME
2
STP11NM60ND181
4h
Future Electronics
2
STP11NM60ND010Tube

数据表和文档

下载 STMicroelectronics STP11NM60ND 的数据表和制造商文档。

IHS

Datasheet12 页2 年前

element14 APAC

TME

Factory Futures

Verical

库存历史记录

3 个月趋势:
-41.58%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-05-21
LTD Date2025-11-21

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描述

由其分销商提供的 STMicroelectronics STP11NM60ND 的描述。

N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
STMicroelectronics
STP11NM60ND N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN TO-220
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
Verical
10 A 600 V 0.45 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Component Stockers USA
Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
MOSFET, N CH, 600V, 10A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.37ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Farnell

图片

RS
TME
Newark
Lanka Micro
iiiC

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics