onsemi FQP13N50

Name: onsemi FQP13N50
Brand: onsemi
SKU: FQP13N50

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220

$ 1.17

EOL

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价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		FQP13N50	38					1.410	1.170	1.040	4h
Farnell	2	FQP13N50	0	1		4.031*	3.772*	3.064*	2.478*	2.478*	1d
element14 APAC		FQP13N50	0	1		3.532*	2.473*	1.991*	1.738*	1.738*	17h
Win Source		WS-FQP13N50	5,187	24				1.666	1.398	1.398	4h
Worldway Electronics		FQP13N50	25,578	7	Tube		0.368	0.356	0.338	0.338	3h

数据表和文档

下载 onsemi FQP13N50 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

element14 APAC

Factory Futures

onsemi

Farnell

库存历史记录

3 个月趋势:

+0.00%

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-06-23

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-06-21

LTD Date2022-12-21

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQP13N50 的描述。

N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220

onsemi

Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail

Avnet

N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.