备用零件
Price @ 1000
$ 0.927
$ 1.335
Stock
111,759
211,131
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
4 V
3 V
Rds On Max
600 mΩ
550 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
70 W
70 W
Input Capacitance
577 pF
540 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
相关零件
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N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220 package
描述
由其分销商提供的 STMicroelectronics STP10NM60ND 的描述。
STP10NM60ND N-channel MOSFET Transistor, 8 A, 600 V, 4-Pin TO-220
N-Channel 650 V 0.6 Ohm Flange Mount MDmesh II Power MosFet - TO-220
N-channel 600 V, 0.57 Ohm, 8 A, TO-220 FDmesh(TM) II Power MOSFET
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220 Tube
70W(Tc) 25V 5V@ 250¦ÌA 20nC@ 10 V 1N 600V 600m¦¸@ 4A,10V 8A 577pF@50V TO-220
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 8A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance577 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max600 mΩ
Resistance470 mΩ
Rise Time10 ns
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time9.2 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm