相关零件
STMicroelectronicsSTS6P3LLH6
P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package
描述
由其分销商提供的 STMicroelectronics STL6P3LLH6 的描述。
P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Single P-Channel 30 V 2.9 W 12 nC Silicon Surface Mount Mosfet - POWER FLAT
MOSFET, P-CH, -30V, -6A, 150DEG C, 2.9W; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)-30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.45 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.9 W
Min Breakdown Voltage30 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.9 W
Rds On Max30 mΩ
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns
Dimensions
Height900 µm