供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-02-01
Lifecycle StatusEOL (Last Updated: 3 months ago)
LTB Date2026-08-07
LTD Date2027-02-07
描述
由其分销商提供的 STMicroelectronics STS6P3LLH6 的描述。
P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package
Mosfet, P-Ch, 30V, 6A, Soic Rohs Compliant: Yes |Stmicroelectronics STS6P3LLH6
Trans MOSFET P-CH 30V 6A 8-Pin SOIC T/R
High avalanche ruggedness | MOSFET P-CH 30V 6A 8SOIC
场效应管, MOSFET, P沟道, 30V, 6A, SOIC;
Power Field-Effect Transistor, 6A I(D), 30V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Input Capacitance1.45 nF
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Breakdown Voltage30 V
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.7 W
Rds On Max30 mΩ
Schedule B8541290080