Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
MOSFET, P, LOGIC, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.5V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:20A; SMD Marking:456; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-3V