由其分销商提供的 STMicroelectronics STL26NM60N 的描述。
N-channel 600 V, 0.160 Ohm typ., 19 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package
Power MOSFET, N Channel, 600 V, 19 A, 0.16 ohm, PowerFLAT, Surface Mount
125mW(Ta),3W(Tc) 30V 5V@ 250¦ÌA 60nC@ 10 V 1N 600V 185m¦¸@ 10A,10V 2.7A,19A 1.8nF@50V SMD
Trans MOSFET N-CH Si 600V 19A 4-Pin Power Flat EP T/R
MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
Power Field-Effect Transistor, 2.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 600V 19A POWERFLAT
MCU 8-bit ST7 ST7 CISC 2KB Flash 5V 8-Pin SO N T/R
600V 19A 160m´Î@10V10A 125W 4V@250uA 6pF@50V N Channel 1.8nF@50V 60nC@10V -55¡Í~+150¡Í@(Tj) SMD MOSFETs ROHS
MOSFET, N CH, 600V, 19A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:PowerFLAT; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012)